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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31 N-channel field-effect transistors
Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05
Philips Semiconductors
Product specification
N-channel field-effect transistors
DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS * Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. SYMBOL d s g DESCRIPTION drain(1) source(1) gate
1 Top view 2
handbook, halfpage
BFR30; BFR31
3 d s
g
MAM385
Marking codes: BFR30: M1p. BFR31: M2p.
Fig.1 Simplified outline and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
QUICK REFERENCE DATA SYMBOL VDS VGSO Ptot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb 40 C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS - - - MIN. MAX. 25 -25 250 UNIT V V mW
1997 Dec 05
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDGO VGSO ID IG Ptot Tstg Tj Note 1. Mounted on a ceramic substrate of 8 x 10 x 0.7 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Mounted on a ceramic substrate of 8 x 10 x 0.7 mm. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain current forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb 40 C; note 1; see Fig.2 open source open drain CONDITIONS - - - - - - -65 - MIN.
BFR30; BFR31
MAX. 25 -25 -25 10 5 250 +150 150 V V V
UNIT
mA mA mW C C
VALUE 430
UNIT K/W
handbook, halfpage
300
MDA245
Ptot (mW) 200
100
0 0 40 80 120 200 160 Tamb (C)
Fig.2 Power derating curve.
1997 Dec 05
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL IGSS IDSS PARAMETER gate cut-off current drain current BFR30 BFR31 VGS gate-source voltage BFR30 BFR31 VGS gate-source voltage BFR30 BFR31 VGSoff gate-source cut-off voltage BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 yos common source output admittance BFR30 BFR31 yos common source output admittance BFR30 BFR31 Cis input capacitance VDS = 10 V; f = 1 MHz ID = 1 mA ID = 0.2 nA Crs feedback capacitance VDS = 10 V; f = 1 MHz; Tamb = 25 C ID = 1 mA ID = 200 A Vn equivalent input noise voltage ID = 200 A; VDS = 10 V; B = 0.6 to 100 Hz - - - - - ID = 200 A; VDS = 10 V; f = 1 kHz - - ID = 1 mA; VDS = 10 V; f = 1 kHz - - ID = 200 A; VDS = 10 V; f = 1 kHz; Tamb = 25 C ID = 1 mA; VDS = 10 V; f = 1 kHz; Tamb = 25 C ID = 0.5 nA; VDS = 10 V - - 1 ID = 50 A; VDS = 10 V - - ID = 1 mA; VDS = 10 V CONDITIONS VDS = 0; VGS = -10 V VGS = 0; VDS = 10 V 4 1 -
BFR30; BFR31
MIN.
MAX. -0.2 10 5 -3 -1.3 -4 -2 -5 -2.5 4 4.5 - - 40 25 20 15 4 4 1.5 1.5 0.5
UNIT nA mA mA V V V V V V mS mS mS mS S S S S pF pF pF pF V
-0.7 0
1.5 0.5 0.75
1997 Dec 05
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
handbook, halfpage
10
MDA657
handbook, halfpage
ID (mA) 8 max 6
10 ID
MDA658
(mA) 8
6
VGS = 0 V
4 typ 2 min 0 -4 -3 -2 -1
4
-0.5 -1.0
2
-1.5 -2.0
0 0 VGS (V) 0 2 4 6 8 10 VDS (V)
BFR30. VDS = 10 V; Tj = 25 C.
BFR30. Tj = 25 C.
Fig.3 Input characteristics.
Fig.4 Output characteristics; typical values.
handbook, halfpage
5 ID (mA) 4
MDA659
handbook, halfpage
5 ID (mA) 4
MDA660
VGS = 0 V max 3 3 -0.2 -0.4 -0.6 1 -0.8 -1 -1.2 0 0 2 4 6 8 10 VDS (V)
2 typ 1
2
0 -5
min -4 -3 -2 -1 0 VGS (V)
BFR31. VDS = 10 V; Tj = 25 C.
BFR31. Tj = 25 C.
Fig.5 Input characteristics.
Fig.6 Output characteristics; typical values.
1997 Dec 05
5
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
handbook, halfpage
6
MDA661
handbook, halfpage
6
MDA662
ID (mA) 4 VGS = 0 V
ID (mA) 4
VGS = 0V -0.2
-0.5 2 -1.0 -1.5 -2.0 0 25 50 75 100 Tj (C) 125 0 25 2
-0.4 -0.6 -0.8 -1 -1.2 50 75 100 Tj (C) 125
BFR30. VDS = 10 V.
BFR31. VDS = 10 V.
Fig.7
Drain current as a function of junction temperature; typical values.
Fig.8 Drain current as a function of junction temperature; typical values.
handbook, halfpage
10
MDA656
handbook, halfpage
-6
MDA663
IGSS (nA) 1
VGS(off) (V) -4
10-1
-2 10-2 BFR30 BFR31 10-3 0 0 2 4 6 8 10 IDSS (mA)
0
50
100
150
Tj (C)
200
VGS = -10 V; VDS = 0.
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 C.
Fig.9
Gate cut-off current as a function of junction temperature; typical values.
Fig.10 Gate-source cut-off voltage as a function of drain current; typical values.
1997 Dec 05
6
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
handbook, halfpage
7.5
MDA664
handbook, halfpage
75
MDA665
yfs (mA/V) 5 BFR31
yos (A/V) 50 BFR30 BFR30 BFR31 25
2.5
0 0 2 4 ID (mA) 6
0 0 2 4 ID (mA) 6
VDS = 10 V; f = 1 kHz; Tamb = 25 C.
VDS = 10 V; f = 1 kHz; Tamb = 25 C.
Fig.11 Common source transfer admittance as a function of drain current; typical values.
Fig.12 Common source output admittance as a function of drain current; typical values.
104 handbook, halfpage |yos| (A/V) 103
MDA666
handbook, halfpage
5
MDA667
Cis (pF) 4
3
2 102
(1)
1
(2)
BFR30 BFR31 30 VDS (V) 0 0
10
0
10
20
-1
-2
-3
-4 -5 VGS (V)
f = 1 kHz; Tamb = 25 C. (1) ID = 4 mA. (2) ID = 1 mA.
VDS = 10 V; f = 1 MHz; Tamb = 25 C.
Fig.13 Common source output admittance as a function of drain-source voltage; typical values.
Fig.14 Input capacitance as a function of gate-source voltage; typical values.
1997 Dec 05
7
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
handbook, halfpage
-1 Crs
MDA668
(pF) -0.8
-0.6
-0.4
-0.2
0 0
-1
-2
-3
-4 -5 VGS (V)
VDS = 10 V; f = 1 MHz; Tamb = 25 C.
Fig.15 Feedback capacitance as a function of gate-source voltage; typical values.
104 handbook, full pagewidth en (nV/ Hz) 103
MDA669
102
10
(1) (2)
1 10 VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA.
102
103
104
105
f (Hz)
106
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
1997 Dec 05
8
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
104 handbook, full pagewidth in (fA/ Hz) 103
MDA670
102
(1)
10
(2)
1 10 VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA.
102
103
104
105
f (Hz)
106
Fig.17 Equivalent noise current source as a function of frequency; typical values.
1997 Dec 05
9
Philips Semiconductors
Product specification
N-channel field-effect transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFR30; BFR31
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997 Dec 05
10
Philips Semiconductors
Product specification
N-channel field-effect transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR30; BFR31
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Dec 05
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117067/00/02/pp12
Date of release: 1997 Dec 05
Document order number:
9397 750 03154

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